advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -60v simple drive requirement r ds(on) 90m fast switching characteristic i d -4a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 201101133 halogen-free product 1 -60 + 25 -4.0 2.5 -55 to 150 ap9575gm-hf rating parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 -3.2 pulsed drain current 1 -20 -55 to 150 linear derating factor 0.02 storage temperature range thermal data parameter total power dissipation operating junction temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - - 90 m v gs =-4.5v, i d =-3a - - 120 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-4a - 4 - s i dss drain-source leakage current v ds =-60v, v gs =0v - - -10 ua drain-source leakage current (t j =70 o c) v ds =-48v, v gs =0v - - -100 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =-4a - 14 28 nc q gs gate-source charge v ds =-48v - 3.3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 8 - nc t d(on) turn-on delay time 2 v ds =-30v - 8 - ns t r rise time i d =-1a - 5 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 46 - ns t f fall time r d =30 -23- ns c iss input capacitance v gs =0v - 1100 2790 pf c oss output capacitance v ds =-25v - 115 - pf c rss reverse transfer capacitance f=1.0mhz - 90 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-4a, v gs =0 v , - 33 - ns q rr reverse recovery charge di/dt=100a/s - 50 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 125 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap9575gm-hf
a p9575gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v 0 10 20 30 40 0 2 4 6 8 10 12 14 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -5.0v -4.5v v g = -3.0 v t a =150 o c 60 70 80 90 100 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-3a t a =25 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-4a v g =-10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
ap9575gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -4a v ds = -48v 10 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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